Class III-V semiconductors, such as gallium arsenide (GaAs) and gallium nitride (GaN) have become commonplace solid state technologies for low noise amplifiers and high power amplifiers from frequencies ranging from several hundred megahertz to over 100 GHz. For high power applications, GaN high electron mobility devices (HEMTs) are supplanting GaAs metal-semiconductor field-effect transistor (MESFET) amplifiers, ..