Pasternack Blog

Gallium nitride (GaN) based semiconductors have been commercially available for several years at this point. GaN technology has made extensive inroads into many power electronics applications, and increasingly in RF/microwave/millimeter-wave applications. GaN, as a semiconductor, has high electron mobility, high band-gap voltage, is very rugged, and can be realized in a variety of technologies using ..

Class III-V semiconductors, such as gallium arsenide (GaAs) and gallium nitride (GaN) have become commonplace solid state technologies for low noise amplifiers and high power amplifiers from frequencies ranging from several hundred megahertz to over 100 GHz. For high power applications, GaN high electron mobility devices (HEMTs) are supplanting GaAs metal-semiconductor field-effect transistor (MESFET) amplifiers, ..

There are many predictions that the RF GaN industry has been, and will continue, to experience substantial growth over the next several years. Predictions estimate that the currently nearly US$ 400 million RF GaN market (2017 close) will likely grow to, or beyond, US$ 1 billion by 2023 [1, 2]. With the defense industry consuming ..

We announced our expanded offering of gallium nitride (GaN) power amplifier product line. GaN power amplifiers have emerged as the technology of choice in RF amplification. The high power density of gallium nitride semiconductor technology dissipates heat more effectively which results in design of RF amplifiers that has significantly higher output power levels over broadband ..