Pasternack Blog

Though Gallium Nitride (GaN) has been making headlines for the past several years as an emerging RF technology, RF semiconductors developed with silicon, namely RF silicon-on-insulator (RF-SOI), has also been advancing as a semiconductor of choice for the exploding RF hardware markets.  Where GaN is a still relatively expensive and small wafer technology, RF-SOI is ..

Gallium nitride (GaN) based semiconductors have been commercially available for several years at this point. GaN technology has made extensive inroads into many power electronics applications, and increasingly in RF/microwave/millimeter-wave applications. GaN, as a semiconductor, has high electron mobility, high band-gap voltage, is very rugged, and can be realized in a variety of technologies using ..

The growing number of RF, microwave, and millimeter-wave applications has led to a growth in the number of RF transistor types, semiconductors, and configurations being used today. As more devices use RF/wireless technology to communicate and sense, there will be an even greater diversity of RF transistor technologies. RF Amplifiers and RF Mixers are a ..

Class III-V semiconductors, such as gallium arsenide (GaAs) and gallium nitride (GaN) have become commonplace solid state technologies for low noise amplifiers and high power amplifiers from frequencies ranging from several hundred megahertz to over 100 GHz. For high power applications, GaN high electron mobility devices (HEMTs) are supplanting GaAs metal-semiconductor field-effect transistor (MESFET) amplifiers, ..

There are many predictions that the RF GaN industry has been, and will continue, to experience substantial growth over the next several years. Predictions estimate that the currently nearly US$ 400 million RF GaN market (2017 close) will likely grow to, or beyond, US$ 1 billion by 2023 [1, 2]. With the defense industry consuming ..