GaN Power Amplifier Product Line Expands

We announced our expanded offering of gallium nitride (GaN) power amplifier product line. GaN power amplifiers have emerged as the technology of choice in RF amplification. The high power density of gallium nitride semiconductor technology dissipates heat more effectively which results in design of RF amplifiers that has significantly higher output power levels over broadband and narrowband frequencies. These rugged connectorized GaN amplifier designs have the advantage of high output load impedance that offers easier impedance matching over wider bandwidths using lower loss components. Applications for Pasternack GaN power amplifier modules include commercial and military radar, jamming systems, medical imaging, communications and electronic warfare.

The Pasternack broad and deep RF amplification component offering includes GaN power amplifier models that feature very high gain levels from 43 to 60 dB across mostly broad frequency bands ranging from 30 MHz to 7.5 GHz. Saturated output power levels range from 10 watts to 100 watts with 20 to 35% Power Added Efficiency (PAE). The thermal efficiency of GaN amplifier technology enables these components to be integrated into smaller, more compact coaxial packages with the same level of high reliability.

All of the high power GaN amplifiers from Pasternack have single voltage supplies which are internally regulated. The 50 ohm input/output matched designs are adaptable to a range of power and modulation requirements. These GaN amps also show impressive harmonic response (-15 to -20 dBc) under worst case conditions. Our GaN power amplifiers are designed to withstand environmental conditions such as humidity, altitude, shock and vibration. Some models are also equipped with integrated heat sinks and cooling fans. Most all Pasternack GaN amplifier designs are EAR99.