Pasternack Blog

Class III-V semiconductors, such as gallium arsenide (GaAs) and gallium nitride (GaN) have become commonplace solid state technologies for low noise amplifiers and high power amplifiers from frequencies ranging from several hundred megahertz to over 100 GHz. For high power applications, GaN high electron mobility devices (HEMTs) are supplanting GaAs metal-semiconductor field-effect transistor (MESFET) amplifiers, ..

We announced our expanded offering of gallium nitride (GaN) power amplifier product line. GaN power amplifiers have emerged as the technology of choice in RF amplification. The high power density of gallium nitride semiconductor technology dissipates heat more effectively which results in design of RF amplifiers that has significantly higher output power levels over broadband ..